npn silicon power darlington high voltage autoprotected the bu323z is a planar, monolithic, highvoltage power darlington with a builtin active zener clamping circuit. this device is specifically designed for unclamped, inductive applications such as electronic ignition, switching regulators and motor control, and exhibit the following main features: ? integrated highvoltage active clamp ? tight clamping voltage window (350 v to 450 v) guaranteed over the 40 c to +125 c temperature range ? clamping energy capability 100% tested in a live ignition circuit ? high dc current gain/low saturation voltages specified over full temperature range ? design guarantees operation in soa at all times ? offered in plastic sot93/to218 type or to220 packages ????????????????????????????????? ????????????????????????????????? maximum ratings ????????????????? ????????????????? rating ??????? ??????? symbol ???????? ???????? value ???? ???? unit ????????????????? ????????????????? collectoremitter sustaining voltage ??????? ??????? v ceo ???????? ???????? 350 ???? ???? vdc ????????????????? ????????????????? collectoremitter voltage ??????? ??????? v ebo ???????? ???????? 6.0 ???? ???? vdc ????????????????? ? ??????????????? ? ????????????????? collector current e continuous e peak ??????? ? ????? ? ??????? i c i cm ???????? ? ?????? ? ???????? 10 20 ???? ? ?? ? ???? adc ????????????????? ????????????????? base current e continuous e peak ??????? ??????? i b i bm ???????? ???????? 3.0 6.0 ???? ???? adc ????????????????? ? ??????????????? ? ????????????????? total power dissipation (t c = 25 c) derate above 25 c ??????? ? ????? ? ??????? p d ???????? ? ?????? ? ???????? 150 1.0 ???? ? ?? ? ???? watts w/ c ????????????????? ????????????????? operating and storage junction temperature range ??????? ??????? t j , t stg ???????? ???????? 65 to +175 ???? ???? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ????????????????? ????????????????? characteristic ??????? ??????? symbol ???????? ???????? max ???? ???? unit ????????????????? ????????????????? thermal resistance, junction to case ??????? ??????? r q jc ???????? ???????? 1.0 ???? ???? c/w ????????????????? ? ??????????????? ? ????????????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ??????? ? ????? ? ??????? t l ???????? ? ?????? ? ???????? 260 ???? ? ?? ? ???? c on semiconductor ? semiconductor components industries, llc, 2002 january, 2002 rev. 11 1 publication order number: bu323z/d bu323z autoprotected darlington 10 amperes 360450 volts clamp 150 watts case 340d02 sot93/to218 type 360 v clamp
bu323z http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics (1) ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter clamping voltage (i c = 7.0 a) (t c = 40 c to +125 c) ????? ? ??? ? ????? v clamp ??? ? ? ? ??? 350 ???? ? ?? ? ???? e ???? ? ?? ? ???? 450 ??? ? ? ? ??? vdc ??????????????????? ??????????????????? collectoremitter cutoff current (v ce = 200 v, i b = 0) ????? ????? i ceo ??? ??? e ???? ???? e ???? ???? 100 ??? ??? m adc ??????????????????? ? ????????????????? ? ??????????????????? emitterbase leakage current (v eb = 6.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? e ???? ? ?? ? ???? e ???? ? ?? ? ???? 50 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ??????????????????? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 8.0 adc, i b = 100 madc) (i c = 10 adc, i b = 0.25 adc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? e e ???? ? ?? ? ???? e e ???? ? ?? ? ???? 2.2 2.5 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 7.0 adc, i b = 70 madc) (t c = 125 c) (i c = 8.0 adc, i b = 0.1 adc) (t c = 125 c) (i c = 10 adc, i b = 0.25 adc) ????? ? ??? ? ? ??? ? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? e e e e e ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? e e e e e ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? 1.6 1.8 1.8 2.1 1.7 ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter on voltage (i c = 5.0 adc, v ce = 2.0 vdc) (t c = 40 c to +125 c) (i c = 8.0 adc, v ce = 2.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? 1.1 1.3 ???? ? ?? ? ???? e e ???? ? ?? ? ???? 2.1 2.3 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? diode forward voltage drop (i f = 10 adc) ????? ? ??? ? ????? v f ??? ? ? ? ??? e ???? ? ?? ? ???? e ???? ? ?? ? ???? 2.5 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (i c = 6.5 adc, v ce = 1.5 vdc) (t c = 40 c to +125 c) (i c = 5.0 adc, v ce = 4.6 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 150 500 ???? ? ?? ? ???? e e ???? ? ?? ? ???? e 3400 ??? ? ? ? ??? e ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ??????????????????? current gain bandwidth (i c = 0.2 adc, v ce = 10 vdc, f = 1.0 mhz) ????? ????? f t ??? ??? e ???? ???? e ???? ???? 2.0 ??? ??? mhz ??????????????????? ? ????????????????? ? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) ????? ? ??? ? ????? c ob ??? ? ? ? ??? e ???? ? ?? ? ???? e ???? ? ?? ? ???? 200 ??? ? ? ? ??? pf ??????????????????? ? ????????????????? ? ??????????????????? input capacitance (v eb = 6.0 v) ????? ? ??? ? ????? c ib ??? ? ? ? ??? e ???? ? ?? ? ???? e ???? ? ?? ? ???? 550 ??? ? ? ? ??? pf ????????????????????????????????? ????????????????????????????????? clamping energy (see notes) ??????????????????? ??????????????????? repetitive nondestructive energy dissipated at turnoff: (i c = 7.0 a, l = 8.0 mh, r be = 100 w ) (see figures 2 and 4) ????? ????? w clamp ??? ??? 200 ???? ???? e ???? ???? e ??? ??? mj ?????????????????????????????????? ?????????????????????????????????? switching characteristics: inductive load (l = 10 mh) ??????? ??????? fall time ?????????????? ?????????????? (i c = 6.5 a, i b1 = 45 ma, ???? ???? t fi ???? ???? e ???? ???? 625 ???? ???? e ??? ??? ns ??????? ??????? storage time ?????????????? ?????????????? (i c = 6 . 5 a , i b1 = 45 ma , v be(off) = 0, r be(off) = 0, v 14 v v 300 v) ???? ???? t si ???? ???? e ???? ???? 10 ???? ???? 30 ??? ??? m s ??????? ??????? crossover time ?????????????? ?????????????? be(off) be(off) v cc = 14 v, v z = 300 v) ???? ???? t c ???? ???? e ???? ???? 1.7 ???? ???? e ??? ??? m s (1) pulse test: pulse width 300 m s, duty cycle = 2.0%.
bu323z http://onsemi.com 3 figure 1. i c = f(v ce ) curve shape i c i nom = 6.5 a output transistor turns on: i c = 40 ma high voltage circuit turns on: i c = 20 ma avalanche diode turns on: i c = 100 m a icer leakage current 250 v 300 v 340 v v ce v clamp nominal = 400 v by design, the bu323z has a builtin avalanche diode and a special high voltage driving circuit. during an autoprotect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. this prevents the transistor from going into a reverse bias operating limit condition. therefore, the device will have an extended safe operating area and will always appear to be in afbsoa.o because of the builtin zener and associated network, the i c = f(v ce ) curve exhibits an unfamiliar shape compared to standard products as shown in figure 1. figure 2. basic energy test circuit mercury contacts wetted relay v ce monitor (v gate ) l inductance (8 mh) i b current source v beoff i b2 source i c current source 0.1 w non inductive i c monitor r be = 100 w the bias parameters, v clamp , i b1 , v be(off) , i b2 , i c , and the inductance, are applied according to the device under test (dut) specifications. v ce and i c are monitored by the test system while making sure the load line remains within the limits as described in figure 4. note: all bu323z ignition devices are 100% energy tested, per the test circuit and criteria described in figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. the device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. the units under test are kept functional during the complete test sequence for the test conditions described: i c(peak) = 7.0 a, i c h = 5.0 a, i c l = 100 ma, i b = 100 ma, r be = 100 w , v gate = 280 v, l = 8.0 mh figure 3. forward bias safe operating area v ce , collector-emitter voltage (volts) 1000 340v 100 10 0.001 0.01 0.1 1 10 t c = 25 c 250ms 10ms 1ms 300 m s i c , collector current (amps) thermal limit second breakdown limit curves apply below rated v ceo
bu323z http://onsemi.com 4 figure 4. energy test criteria for bu323z the shaded area represents the amount of energy the de- vice can sustain, under given dc biases (i c /i b /v be(off) / r be ), without an external clamp; see the test schematic dia- gram, figure 2. the transistor passes the energy test if, for the inductive load and i cpeak /i b /v be(off) biases, the v ce remains outside the shaded area and greater than the v gate minimum limit, figure 4a. the transistor fails if the v ce is less than the v gate (minimum limit) at any point along the v ce /i c curve as shown on figures 4b, and 4c. this assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. the transistor fails if its collector/emitter breakdown voltage is less than the v gate value, figure 4d. i cpeak (a) i c i c high i c low v ce v gate min i cpeak i c i c high i c low v ce v gate min (b) i cpeak i c i c high i c low v ce v gate min (c) i cpeak i c i c high i c low v ce v gate min (d)
bu323z http://onsemi.com 5 figure 5. dc current gain i c , collector current (milliamps) 10000 1000 100 10 100 1000 10000 t j = 125 c 25 c h fe , dc current gain -40 c v ce = 1.5 v figure 6. dc current gain i c , collector current (milliamps) 100000 1000 100 10 100 1000 10000 typical h fe , dc current gain v ce = 5 v, t j = 25 c 10000 typ + 6 s typ - 6 s figure 7. collector saturation region i b , base current (milliamps) 100 10 1 0 2.5 4.0 5.0 t j = 25 c i c = 3 a v ce , collector-emitter voltage (volts) 4.5 2.0 3.5 3.0 1.0 0.5 1.5 5 a 7 a 8 a 10 a figure 8. collectoremitter saturation voltage i c , collector current (amps) 10 1 0.1 0.4 1.4 2.0 2.4 v ce , collector-emitter voltage (volts) 2.2 1.2 1.8 1.6 0.8 0.6 1.0 t j = 125 c 25 c i c /i b = 150 figure 9. baseemitter saturation voltage i c , collector current (amps) 10 1 0.1 0.8 1.8 2.0 1.4 1.6 1.2 1.0 figure 10. baseemitter aono voltages i c , collector current (amps) 10 1 0.1 0.6 1.4 1.8 2.0 1.2 1.6 0.8 1.0 v be , base-emitter voltage (volts) i c /i b = 150 t j = 25 c 125 c v be(on) , base-emitter voltage (volts) v ce = 2 volts t j = 25 c 125 c
bu323z http://onsemi.com 6 package dimensions case 340d02 sot93/to218 type issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069
bu323z http://onsemi.com 7 notes
bu323z http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bu323z/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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